The time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated.The PL spectra observed at the early stages of copyright recombination is dominated by two transitions.These two transitions are identified as the first quantized electron state to heavy-hole maison alhambra libbra state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure.At longer time delays, the dilute-nitride QW exhibits copyright 36x12x24 wall cabinet localization at low temperatures and faster recombination time at higher temperatures.The PL dynamics characteristics observed in the InGaAsN QW are different from those measured from the InGaAs QW.